DRAM_SAMSUNG_Product Center_ECtronics Technology Limited

Product Center

Specialized MEMORY Spot Supplier

10 years accumulation, intensive cultivation and intensive management

Part Number	Density	Org.	Speed	Voltage	Temp.	Package	Product Status
K4A4G045WE-BCPB	4Gb	1G x 4	2133 Mbps	1.2 V	0 ~ 85 °C	78FBGA	Mass Production
K4A4G045WE-BCRC	4Gb	1G x 4	2400 Mbps	1.2 V	0 ~ 85 °C	78FBGA	Mass Production
K4A4G045WE-BCTD	4Gb	1G x 4	2666 Mbps	1.2 V	0 ~ 85 °C	78FBGA	Mass Production
K4A4G085WE-BCPB	4Gb	512M x 8	2133 Mbps	1.2 V	0 ~ 85 °C	78FBGA	Mass Production
K4A4G085WE-BCRC	4Gb	512M x 8	2400 Mbps	1.2 V	0 ~ 85 °C	78FBGA	Mass Production
K4A4G085WE-BCTD	4Gb	512M x 8	2666 Mbps	1.2 V	0 ~ 85 °C	78FBGA	Mass Production
K4A4G085WE-BIRC	4Gb	512M x 8	2400 Mbps	1.2 V	-40 ~ 95 °C	78FBGA	Mass Production
K4A4G085WE-BITD	4Gb	512M x 8	2666 Mbps	1.2 V	-40 ~ 95 °C	78FBGA	Mass Production
K4A4G085WE-BIWE	4Gb	512M x 8	3200 Mbps	1.2 V	-40 ~ 95 °C	78FBGA	Mass Production
K4A4G165WE-BCPB	4Gb	256M x 16	2133 Mbps	1.2 V	0 ~ 85 °C	96FBGA	Mass Production
K4A4G165WE-BCRC	4Gb	256M x 16	2400 Mbps	1.2 V	0 ~ 85 °C	96FBGA	Mass Production
K4A4G165WE-BCTD	4Gb	256M x 16	2666 Mbps	1.2 V	0 ~ 85 °C	96FBGA	Mass Production
K4A4G165WE-BIRC	4Gb	256M x 16	2400 Mbps	1.2 V	-40 ~ 95 °C	96FBGA	Mass Production
K4A4G165WE-BITD	4Gb	256M x 16	2666 Mbps	1.2 V	-40 ~ 95 °C	96FBGA	Mass Production
K4A4G165WE-BIWE	4Gb	256M x 16	3200 Mbps	1.2 V	-40 ~ 95 °C	96FBGA	Mass Production
K4A8G045WB-BCPB	8Gb	2G x 4	2133 Mbps	1.2 V	0 ~ 85 °C	78FBGA	Mass Production
K4A8G045WB-BCRC	8Gb	2G x 4	2400 Mbps	1.2 V	0 ~ 85 °C	78FBGA	Mass Production
K4A8G045WB-BCTD	8Gb	2G x 4	2666 Mbps	1.2 V	0 ~ 85 °C	78FBGA	Mass Production
K4A8G045WC-BCPB	8Gb	2G x 4	2133 Mbps	1.2 V	0 ~ 85 °C	78FBGA	Mass Production
K4A8G045WC-BCRC	8Gb	2G x 4	2400 Mbps	1.2 V	0 ~ 85 °C	78FBGA	Mass Production
K4A8G045WC-BCTD	8Gb	2G x 4	2666 Mbps	1.2 V	0 ~ 85 °C	78FBGA	Mass Production
K4A8G085WB-BCPB	8Gb	1G x 8	2133 Mbps	1.2 V	0 ~ 85 °C	78FBGA	Mass Production
K4A8G085WB-BCRC	8Gb	1G x 8	2400 Mbps	1.2 V	0 ~ 85 °C	78FBGA	Mass Production
K4A8G085WB-BCTD	8Gb	1G x 8	2666 Mbps	1.2 V	0 ~ 85 °C	78FBGA	Mass Production
K4A8G085WB-BIRC	8Gb	1G x 8	2400 Mbps	1.2 V	-40 ~ 95 °C	78FBGA	Mass Production
K4A8G085WB-BITD	8Gb	1G x 8	2666 Mbps	1.2 V	-40 ~ 95 °C	78FBGA	Mass Production
K4A8G085WB-BIWE	8Gb	1G x 8	3200 Mbps	1.2 V	-40 ~ 95 °C	78FBGA	Mass Production
K4A8G085WC-BCPB	8Gb	1G x 8	2133 Mbps	1.2 V	0 ~ 85 °C	78FBGA	Mass Production
K4A8G085WC-BCRC	8Gb	1G x 8	2400 Mbps	1.2 V	0 ~ 85 °C	78FBGA	Mass Production
K4A8G085WC-BCTD	8Gb	1G x 8	2666 Mbps	1.2 V	0 ~ 85 °C	78FBGA	Mass Production
K4A8G165WB-BCPB	8Gb	512M x 16	2133 Mbps	1.2 V	0 ~ 85 °C	96FBGA	Mass Production
K4A8G165WB-BCRC	8Gb	512M x 16	2400 Mbps	1.2 V	0 ~ 85 °C	96FBGA	Mass Production
K4A8G165WB-BCTD	8Gb	512M x 16	2666 Mbps	1.2 V	0 ~ 85 °C	96FBGA	Mass Production
K4A8G165WB-BIRC	8Gb	512M x 16	2400 Mbps	1.2 V	-40 ~ 95 °C	96FBGA	Mass Production
K4A8G165WB-BITD	8Gb	512M x 16	2666 Mbps	1.2 V	-40 ~ 95 °C	96FBGA	Mass Production
K4A8G165WB-BIWE	8Gb	512M x 16	3200 Mbps	1.2 V	-40 ~ 95 °C	96FBGA	Mass Production
K4A8G165WC-BCPB	8Gb	512M x 16	2133 Mbps	1.2 V	0 ~ 85 °C	96FBGA	Mass Production
K4A8G165WC-BCRC	8Gb	512M x 16	2400 Mbps	1.2 V	0 ~ 85 °C	96FBGA	Mass Production
K4A8G165WC-BCTD	8Gb	512M x 16	2666 Mbps	1.2 V	0 ~ 85 °C	96FBGA	Mass Production